Qualcomm Reveals Next-Generation Fast Charging Technology With Quick Charge 3.0

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Qualcomm today also announced its next-generation of fast charging technology with Qualcomm Quick Charge 3.0 technology. It employs Intelligent Negotiation for Optimum Voltage (INOV), a new algorithm developed by Qualcomm, designed to allow portable devices the ability to determine what power level to request at any point in time for optimum power transfer, while maximizing efficiency. With Quick Charge 3.0 you can charge a typical phone from zero to 80 percent in about 35 minutes compared to conventional mobile devices without Quick Charge that may typically require almost an hour and a half.

With, INOV and other advancements, Quick Charge 3.0 is designed to be up to 38 percent more efficient than Quick Charge 2.0, while also implementing additional steps to help protect battery cycle life.  Additionally, when used with Qualcomm Technologies’ latest, advanced parallel charging configurations, Quick Charge 3.0 can:

  • Help improve fast charging up to 27% or reduces power dissipation by up to 45% when compared to Quick Charge 2.0.
  • Charge up to 2x faster than Quick Charge 1.0

This new technology will be supported in devices runnning Snapdragon 820, 620, 618, 617 and 430, and is anticipated to appear in mobile devices launched next year. So far, none of the reports have confirmed that Microsoft’s upcoming flagships will come with Qualcomm Quick Charge 2.0 technology. But I really hope Microsoft enables it in their devices as it is supported by the Snapdragon 810 chip inside it.

More about the topics: qualcomm, windows phone

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